A NOTE ON SAINT-VENANT'S PRINCIPLEZASLAVSKY A.1982; ISRAEL JOURNAL OF TECHNOLOGY; ISSN 0021-2202; ISR; DA. 1982; VOL. 20; NO 3; PP. 143-144; BIBL. 3 REF.Article

STABILITY OF PORTAL FRAMES WITH HINGED GIRDERS UNDER A MOVING LOADZASLAVSKY A.1981; ENG. STRUCT.; GBR; DA. 1981; VOL. 3; NO 2; PP. 96-104; BIBL. 4 REF.Article

Residual stresses in beams with yielding during unloading = Contraintes résiduelles dans des poutres sujettes à un écoulement plastique lors du déchargementZASLAVSKY, A.Journal of structural engineering (New York, NY). 1989, Vol 115, Num 3, pp 741-744, issn 0733-9445Article

Legendre transforms and dual varietiesZASLAVSKY, A. I.Journal of mathematical analysis and applications. 1994, Vol 183, Num 3, pp 670-684, issn 0022-247XArticle

Combining census, dual-system, and evaluation study data to estimate population sharesZASLAVSKY, A. M.Journal of the American Statistical Association. 1993, Vol 88, Num 423, pp 1092-1105, issn 0162-1459Article

A Compact Capacitor-Less High-Speed DRAM Using Field Effect-Controlled Charge RegenerationWAN, J; LE ROYER, C; ZASLAVSKY, A et al.IEEE electron device letters. 2012, Vol 33, Num 2, pp 179-181, issn 0741-3106, 3 p.Article

DC and 1/f noise characteristics of strained-Si nMOSFETs using chemical-mechanical-polishing techniqueHAU YU LIN; SAN LEIN WU; SHOOU JINN CHANG et al.Solid-state electronics. 2009, Vol 53, Num 8, pp 905-908, issn 0038-1101, 4 p.Conference Paper

Defect delineation and characterization in SiGe, Ge and other semiconductor-on-insulator structuresABBADIE, A; ALLIBERT, F; BRUNIER, F et al.Solid-state electronics. 2009, Vol 53, Num 8, pp 850-857, issn 0038-1101, 8 p.Conference Paper

Epitaxial growth of Si:C/Si/SiGe into cavity formed by selective etching of SiGeYAMAMOTO, Yuji; KÖPKE, Klaus; WEIDNER, Günter et al.Solid-state electronics. 2009, Vol 53, Num 8, pp 824-827, issn 0038-1101, 4 p.Conference Paper

Low-frequency noise in buried-channel SiGe n-MODFETsMADAN, Anuj; CRESSLER, John D; KOESTER, Steven J et al.Solid-state electronics. 2009, Vol 53, Num 8, pp 901-904, issn 0038-1101, 4 p.Conference Paper

New method to calibrate the pattern dependency of selective epitaxy of SiGe layersKOLAHDOUZ, M; MARESCA, L; OSTLING, M et al.Solid-state electronics. 2009, Vol 53, Num 8, pp 858-861, issn 0038-1101, 4 p.Conference Paper

All hot wire CVD TFTs with high deposition rate silicon nitride (3 nm/s)SCHROPP, R. E. I; NISHIZAKI, S; HOUWELING, Z. S et al.Solid-state electronics. 2008, Vol 52, Num 3, pp 427-431, issn 0038-1101, 5 p.Conference Paper

Mechanical stability of poly-Si TFT on metal foilJUN HYUK CHEON; JUNG HO BAE; JIN JANG et al.Solid-state electronics. 2008, Vol 52, Num 3, pp 473-477, issn 0038-1101, 5 p.Conference Paper

Progress in fabrication processing of thin film transistorsYOSHIOKA, Kazuya; SAMESHIMA, Toshiyuki; SANO, Naoki et al.Solid-state electronics. 2008, Vol 52, Num 3, pp 359-364, issn 0038-1101, 6 p.Conference Paper

Source-gated thin-film transistorsSHANNON, J. M; BALON, F.Solid-state electronics. 2008, Vol 52, Num 3, pp 449-454, issn 0038-1101, 6 p.Conference Paper

Negative differential resistance in ultrathin Ge-on-insulator FETsKAZAZIS, D; ZASLAVSKY, A; TUTUC, E et al.Semiconductor science and technology. 2007, Vol 22, Num 1, issn 0268-1242, S1-S4Conference Paper

Microcavities, photonic crystals and semiconductors : From basic physics to applications in light emittersWEISBUCH, C; BENISTY, H; HOUDRE, R et al.International journal of high speed electronics and systems. 2000, Vol 10, Num 1, pp 339-354Conference Paper

Electron drift velocity of the two-dimensional electron gas in compound semiconductorsDMITRIEV, Alexander; KACHOROVSKI, Valentin; SHUR, Michael S et al.International journal of high speed electronics and systems. 2000, Vol 10, Num 1, pp 103-110Conference Paper

Optimized design of the subband structure in mos inversion layers for realizing high performance and low power Si MOSFETsTAKAGI, Shin-Ichi.International journal of high speed electronics and systems. 2000, Vol 10, Num 1, pp 155-170Conference Paper

Photonic crystal nanocavity lasersSCHERER, A; PAINTER, O; HUSAIN, A et al.International journal of high speed electronics and systems. 2000, Vol 10, Num 1, pp 387-391Conference Paper

Innovative integration based on silicon-core technologies for sensor and communications applicationsNAGATSUMA, Tadao; MACHIDA, Katsuyuki; ISHII, Hiromu et al.International journal of high speed electronics and systems. 2000, Vol 10, Num 1, pp 205-215Conference Paper

Growth of SiGe/Si quantum well structures by atmospheric pressure chemical vapor depositionGRÜTZMACHER, D. A; SEDGWICK, T. O; ZASLAVSKY, A et al.Journal of electronic materials. 1993, Vol 22, Num 3, pp 303-308, issn 0361-5235Article

Goniopolarimetric inversion using SVD: An application to type III radio bursts observed by STEREOKRUPAR, V; SANTOLIK, O; CECCONI, B et al.Journal of geophysical research. 2012, Vol 117, Num A6, issn 0148-0227, A06101.1-A06101.11Article

A selective epitaxy collector module for high-speed Si/SiGe:C HBTsGEYNET, B; CHEVALIER, P; CHANTRE, A et al.Solid-state electronics. 2009, Vol 53, Num 8, pp 873-876, issn 0038-1101, 4 p.Conference Paper

Investigation of interface characteristics in strained-Si nMOSFETsCHENG WEN KUO; SAN LEIN WU; SHOOU JINN CHANG et al.Solid-state electronics. 2009, Vol 53, Num 8, pp 897-900, issn 0038-1101, 4 p.Conference Paper